Strained silicon directly on insulator

Strained silicon directly on insulator (SSDOI) is a procedure developed by IBM which removes the silicon germanium layer in the strained silicon process leaving the strained silicon directly on the insulator. In contrast, strained silicon on SGOI provides a strained silicon layer on a relaxed silicon germanium layer on an insulator, as developed by MIT.[1]

References

  1. ↑ "Strained-Si-on-insulator (SSOI) and SiGe-on-insulator (SGOI): Fabrication obstacles and solutions". ResearchGate. doi:10.1557/PROC-745-N4.7. Retrieved 2016-03-11.


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