BCDMOS

BCDMOS is a complex circuit composed of Bipolar, CMOS and LDMOS devices.

Breakdown voltages can be as high as 750 V.[1]

Features

According to Maxim website, it is an innovative process characteristics that provides the following features:

  1. high break-down voltage but small transistors,
  2. quite low on-resistance, which is important for the integration of multiple power FETs of low resistivity,
  3. double-metal-layer to support hi-current
  4. combining thin film and poly-poly caps (in silicon). High-accuracy references can be integrated.

According to Dongbu HiTek's news, it claims to launch the first 0.18-micrometre BCDMOS process in industry. The new process integrates logic, analog and hi-voltage functions to reduce size.

References

  1. ↑ BCDMOS evolves to handle wide range of ultra-high-voltage applications. 2013
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